We present a comprehensive experimental study of the neutral donor to donor-bound exciton transition (D0 -> D0X) in isotopically enriched 28Si, focusing on the group V donors P, As, and Sb under finely tuned uniaxial stress along the [100] and [110] crystal axes and magnetic fields from 3.5 mT to 1.7 T. From these measurements, donor-specific deformation potentials are extracted. The uniaxial electron deformation potential u is found to be significantly larger than values reported for other states or transitions in silicon and shows clear dependence on the donor species, indicating an increased sensitivity of the D0X state to strain and central-cell effects. We also observe a magnetic field dependence of the hole shear deformation potential d, suggesting a more complex strain coupling mechanism than captured by standard theory. Diamagnetic shift parameters determined from Zeeman spectra show good agreement with earlier measurements. Our results provide a refined parameter set critical for the design of silicon quantum devices based on D0X transitions.

Nitrogen-vacancy (NV) centers in diamond are optically addressable spin defects with great potential for nanoscale quantum sensing. A key application of NV centers is the detection of external spins at the diamond surface. Among metals, platinum thin films - widely used in spintronics, catalysis, and electrochemistry - provide a particularly interesting system for such studies. However, the interaction between NV centers and metals is known to affect their quantum sensing capabilities. In this work, five platinum-covered diamond samples containing shallow NVs created via nitrogen implantation with different energies (2.5-60 keV) are used to investigate the optical and quantum properties of NV ensembles beneath metal films. A substantial reduction of the photoluminescence lifetime and a pronounced decrease of the NV- population are found for NV ensembles located near the diamond-platinum interface. As a result, optically detected magnetic resonance experiments could only be efficiently performed on diamonds implanted with at least 20 keV, where a strong increase in the T 2 coherence time beneath the platinum thin films is observed. The study describes the various processes affecting NV centers near diamond-platinum interfaces and provides guidance for the integration of thin metal films with near-surface NV centers.

Nitrogen-vacancy (NV) centers in diamond can be read out optically or electrically. To better understand the physics of their internal electronic transitions as well as ionization and recharging, we study the spin contrast observed in both readout methods as a function of the excitation wavelength for both single NV centers and ensembles. While the optical readout works best between 525 and 550 nm , the highest electrical spin contrast is achieved by resonantly exciting the NV0 zero-phonon line at 575 nm . Additional spectral features attributed to a further excited state of NV-, phonon sidebands and tunnel coupling to nitrogen donors are observed and discussed.

Group IV vacancy color centers in diamond are promising spin-photon interfaces with strong potential for applications in photonic quantum technologies. Reliable methods for controlling and stabilizing their charge state are urgently needed for scaling to multiqubit devices. Here, we manipulate the charge state of silicon vacancy (SiV) ensembles by combining luminescence and photocurrent spectroscopy. We controllably convert the charge state between the optically active SiV- and dark SiV2- with megahertz rates and >90% contrast by judiciously choosing the local potential applied to in-plane surface electrodes and the laser excitation wavelength. We observe intense SiV- photoluminescence under hole capture, measure the intrinsic conversion time from the dark SiV2- to the bright SiV- to be 36.4(67) ms, and demonstrate how it can be enhanced by a factor of 105 via optical pumping. Moreover, we obtain previously unknown information on the defects that contribute to photoconductivity, indicating the presence of substitutional nitrogen and divacancies.

Quantum sensing with spin defectsin diamond, such asthe nitrogenvacancy (NV) center, enables the detection of various chemical specieson the nanoscale. Molecules or ions with unpaired electronic spinsare typically probed by their influence on the NV center'sspin relaxation. Whereas it is well-known that paramagnetic ions reducethe NV center's relaxation time (T (1)), here we report on the opposite effect for diamagnetic ions. Wedemonstrate that millimolar concentrations of aqueous diamagneticelectrolyte solutions increase the T (1) timeof near-surface NV center ensembles compared to pure water. To elucidatethe underlying mechanism of this surprising effect, single and doublequantum NV experiments are performed, which indicate a reduction ofmagnetic and electric noise in the presence of diamagnetic electrolytes.In combination with ab initio simulations, we proposethat a change in the interfacial band bending due to the formationof an electric double layer leads to a stabilization of fluctuatingcharges at the interface of an oxidized diamond. This work not onlyhelps to understand noise sources in quantum systems but could alsobroaden the application space of quantum sensors toward electrolytesensing in cell biology, neuroscience, and electrochemistry.

Materials combining semiconductor functionalities with spin control are desired for the advancement of quantum technologies. Here, we study the magneto-optical properties of novel paramagnetic Ruddlesden-Popper hybrid perovskites Mn:(PEA)2PbI4 (PEA = phenethylammonium) and report magnetically brightened excitonic luminescence with strong circular polarization from the interaction with isolated Mn2+ ions. Using a combination of superconducting quantum interference device (SQUID) magnetometry, magneto-absorption and transient optical spectroscopy, we find that a dark exciton population is brightened by state mixing with the bright excitons in the presence of a magnetic field. Unexpectedly, the circular polarization of the dark exciton luminescence follows the Brillouin-shaped magnetization with a saturation polarization of 13% at 4 K and 6 T. From high-field transient magneto-luminescence we attribute our observations to spin-dependent exciton dynamics at early times after excitation, with first indications for a Mn-mediated spin-flip process. Our findings demonstrate manganese doping as a powerful approach to control excitonic spin physics in Ruddlesden-Popper perovskites, which will stimulate research on this highly tuneable material platform with promise for tailored interactions between magnetic moments and excitonic states.

We report on a novel dynamical phenomenon in electron spin resonance experiments of phosphorus donors. When strongly coupling the paramagnetic ensemble to a superconducting lumped element resonator, the coherent exchange between these two subsystems leads to a train of periodic, self-stimulated echoes after a conventional Hahn echo pulse sequence. The presence of these multiecho signatures is explained using a simple model based on spins rotating on the Bloch sphere, backed up by numerical calculations using the inhomogeneous Tavis-Cummings Hamiltonian.

Magnetic anisotropy critically determines the utility of magnetic nanocrystals (NCs) in new nanomagnetism technologies. Using angular-dependent electron magnetic resonance (EMR), we observe magnetic anisotropy in isotropically arranged NCs of a nonmagnetic material. We show that the shape of the EMR angular variation can be well described by a simple model that considers magnetic dipole–dipole interactions between dipoles randomly located in the NCs, most likely due to surface dangling bonds. The magnetic anisotropy results from the fact that the energy term arising from the magnetic dipole–dipole interactions between all magnetic moments in the system is dominated by only a few dipole pairs, which always have an anisotropic geometric arrangement. Our work shows that magnetic anisotropy may be a general feature of NC systems containing randomly distributed magnetic dipoles.

We extend the infrared thermography of thin materials for measurements of the full time response to homogeneous heating via illumination. We demonstrate that the thermal conductivity, the heat capacity, as well as the thermal diffusivity can be determined comparing the experimental data to finite difference simulations using a variety of test materials such as thin doped and undoped silicon wafers, sheets of steel, as well as gold and polymer films. We show how radiative cooling during calibration and measurement can be accounted for and that the effective emissivity of the material investigated can also be measured by the setup developed.

This work reports the measurement of electron g-factor anisotropy (|Δg|=|g001−g1¯10|) for phosphorous donor qubits in strained silicon (sSi = Si/Si1−xGex) environments. Multimillion-atom tight-binding simulations are performed to understand the measured decrease in |Δg| as a function of x, which is attributed to a reduction in the interface-related anisotropy. For x<7%, the variation in |Δg| is linear and can be described by ηxx, where ηx≈1.62×10−3. At x=20%, the measured |Δg| is 1.2±0.04×10−3, which is in good agreement with the computed value of 1×10−3. When strain and electric fields are applied simultaneously, the strain effect is predicted to play a dominant role on |Δg|. Our results provide useful insights on the spin properties of sSi:P for spin qubits, and more generally for devices in spintronics and valleytronics areas of research.